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 EIC1010-25
10.0-10.25 GHz 25-Watt Internally Matched Power FET
2X 0.079 MIN 4X 0.102
FEATURES
* * * * * * * 10.0 - 10.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44 dBm Output Power at 1dB Compression 7 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
0.945 0.803
Excelics
EIC1010-25
0.024 0.580
YYWW
SN
0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095
0.055 0.168
ELECTRICAL CHARACTERISTICS (Ta = 25C)
SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH
1.
Caution! ESD sensitive device. MIN
43 6.5
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ 4000mA Gain at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ 4000mA Gain Flatness f = 10.0-10.25GHz VDS = 9 V, IDSQ 4000mA Power Added Efficiency at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ 4000mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance
2
TYP
44 7
MAX
UNITS
dBm dB
0.6 33 6500 11 -2.5 1.4 7200 16 -4.0 1.8
o
dB % mA A V C/W
f = 10.0-10.25GHz
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 130 mA
2.
Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 105mA and -10.5mA respectively Overall Rth depends on case mounting.
MAXIMUM RATING AT 25C1,2
SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 38.5 dBm 175 C -65 to +175 C 83W
o o
CONTINUOUS2 10V -4V @ 3dB Compression 175 oC -65 to +175 oC 83W
Vds Vgs Pin Tch Tstg Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4 Revision 01
EIC1010-25
10.0-10.25 GHz 25-Watt Internally Matched Power FET
10 5 0
dB(S(1,2)) dB(S(2,1))
S(2,2) S(1,1)
-5 -10 -15 -20 9.7 9.8 9.9 10.0 10.1 10.2 10.3 10.4 10.5 10.6
freq (9.700GHz to 10.60GHz)
freq, GHz
Frequency GHz 9.7 9.8 9.9 10 10.1 10.2 10.3 10.4 10.5 10.6
S11 MAG ANG 0.542 21.8 0.457 9.2 0.349 -4.0 0.218 -15.3 0.077 -9.8 0.095 96.3 0.232 94.4 0.346 81.5 0.428 67.9 0.479 54.5
S21 MAG 0.104 0.116 0.127 0.138 0.143 0.147 0.144 0.139 0.132 0.125
ANG -48.9 -65.0 -81.8 -100.3 -119.5 -139.0 -158.3 -176.3 166.7 150.6
S12 MAG 2.238 2.398 2.551 2.675 2.731 2.684 2.597 2.42 2.212 2.029
ANG 0.3 -15.2 -31.9 -50.2 -69.2 -89.1 -107.8 -126.4 -143.3 -159.8
S22 MAG 0.488 0.467 0.432 0.379 0.322 0.264 0.243 0.265 0.317 0.377
ANG 56.5 41.0 23.5 2.1 -23.9 -58.3 -99.5 -136.7 -165.0 174.3
Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 9 V, IDSQ 4000mA
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4 Revision 01
EIC1010-25
10.0-10.25 GHz 25-Watt Internally Matched Power FET
P1dB v.s Frequency
45
8.5 8 7.5
G1dB v.s Frequency
44
P1dB/dBm
G1dB/dB
43
7 6.5
42
41
6 5.5 9.95
40 9.95
10
10.05
10.1
10.15
10.2
10.25
10.3
10
10.05
10.1
10.15
10.2
10.25
10.3
Frequency/GHz
Frequency/GHz
VDS = 9 V, IDSQ 4000mA
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
2X 0.079 MIN
4X 0.102
Excelics
EIC1010-25
0.945 0.803
0.024 0.580
YYWW
SN
0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095
0.055 0.168
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4 Revision 01
EIC1010-25
10.0-10.25 GHz 25-Watt Internally Matched Power FET
DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 4 of 4 Revision 01


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